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Spin-orbit torque for ultraefficient nonvolatile memories

Thursday 19, 14:30

Jose Hugo Garcia
Institu Català de Nanociència i Nanotecnologia (ICN2), Spain

Electronic devices are ubiquitous in modern society. These devices consume a moderate amount of energy, but their widespread adoption globally has created a significant energy footprint. The spin-orbit torque phenomenon could be used to significantly reduce the energy consumption of RAM memories while also providing new functionalities, such as non-volatility. In this presentation, we will introduce the phenomenon phenomenologically and present our theory for 2D materials. We expect to demonstrate how these materials could be used as relevant platforms for future memory technologies.